IXTH35N30 Datasheet - IXYS Corporation

IXTH35N30, Power MOSFET

www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0..

datasheet Preview Page 1 from Datasheet4u.com

IXTH35N30_IXYSCorporation.pdf

IXTH35N30 Datasheet Preview — Preview of IXTH35N30 PDF

Datasheet Details

Part number:

IXTH35N30

Manufacturer:

IXYS Corporation

File Size:

138.49 KB

Description:

Power MOSFET

Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l IX

IXTH35N30 Distributors

📁 Related Datasheet

IXTH300N04T2 IXTH30N45 IXTH30N50L IXTH30N50L2 IXTH30N50P IXTH30N60L2

📌 All Tags

IXTH35N30 Power MOSFET IXYS Corporation

IXYS Corporation IXTH35N30-like datasheet