Datasheet Specifications
- Part number
- IXTH35N30
- Manufacturer
- IXYS Corporation
- File Size
- 138.49 KB
- Datasheet
- IXTH35N30_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0..Features
* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test ConditionsApplications
* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8IXTH35N30 Distributors
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