✔ IXTH35N30 Features
- Drain Source Voltage-
: VDSS= 300V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 100mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations f
✔ IXTH35N30 Application
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- AC and DC Motor Drives
- ABSOLUTE MAXIMUM R
PDF File Details
INCHANGE manufacturer logo
Part number:
IXTH35N30
Manufacturer:
INCHANGE
File Size:
331.67kb
Download:
📄 Datasheet
Description:
N-channel mosfet.
IXTH35N30 - Power MOSFET
(IXYS Corporation)
..
MegaMOSTMFET
IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode
VDSS 300 V 300 V 300 V
ID25 35 A 40 A 40 A
RDS(on) 0..
IXTH300N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTH300N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDSS = ID25 =
RDS(on) ≤
40V 300A.
IXTH30N45 - N-Channel MOSFET
(IXYS)
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω 30 A 0.17 Ω
TO-247.
IXTH30N50 - Power MOSFET
(IXYS Corporation)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V DSS
V DGR V
GS
VGSM ID25 I
DM
PD TJ T.
IXTH30N50 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Sw.
IXTH30N50L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTH30N50L
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching .
IXTH30N50L - Power MOSFET
(IXYS)
Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS V.
IXTH30N50L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTH30N50L2 - Power MOSFET
(IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2
N-Channel Enhancement Mode
D O DD
R Gi
G O ww
O
S
Symbol
VDSS VDGR
V.