IXTH34N65X2, IXTA34N65X2 Datasheet (IXYS)

IXTH34N65X2 - Power MOSFET

X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP34N65X2 IXTH34N65X2 VDSS = ID25 =  RDS(on) 650V 34A 96m TO-220 (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10

IXTH34N65X2 Features

* International Standard Packages

* Low R and Q DS(ON) G

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Cir

IXTH34N65X2, IXTA34N65X2 Datasheet - IXYS

IXTH34N65X2 - Power MOSFET

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