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IXTH6N80 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTH6N80
Manufacturer	INCHANGE
File Size	332.71 KB
Description	N-Channel MOSFET
Datasheet	IXTH6N80-INCHANGE.pdf

IXTH6N80 Product details

Features

Drain Source Voltage- : VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 11, 2020 |