IXTH6N80 Datasheet - INCHANGE

IXTH6N80, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Drain Source Voltage- : VDSS= 800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain

IXTH6N80-INCHANGE.pdf