IXTH6N150 Datasheet - IXYS

IXTH6N150 Power MOSFET

High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268.

IXTH6N150 Features

* International Standard Packages

* Molding Epoxies Weet UL 94 V-0 Flammability Classification

* Fast Intrinsic Diode

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Capacitor Di

IXTH6N150 Datasheet (297.86 KB)

IXTH6N150 Datasheet Preview — Preview of IXTH6N150 PDF

Datasheet Details

Part number:

IXTH6N150

Manufacturer:

IXYS

File Size:

297.86 KB

Description:

Power mosfet.

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IXTH6N150 Power MOSFET IXYS

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