IXTH67N10 Datasheet - IXYS Corporation

IXTH67N10, N-Channel MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247.

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IXTH67N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTH67N10

Manufacturer:

IXYS Corporation

File Size:

1.11 MB

Description:

N-Channel MOSFET

Features

* S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier B Symbol Test Conditions O V

Applications

* z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies VGS(th) VDS = VGS, ID = 4 mA 2.0 4V z DC choppers z AC motor control IGSS VGS = ±20 VDC, VDS = 0 ±100 nA z Temperature and lighting controls z Low voltage relays IDSS VDS =

IXTH67N10 Distributors

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IXTH67N10 N-Channel MOSFET IXYS Corporation

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