Datasheet4U Logo Datasheet4U.com

IXTH6N90

Standard Power MOSFET

IXTH6N90 Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9

IXTH6N90 Datasheet (104.91 KB)

Preview of IXTH6N90 PDF

Datasheet Details

Part number:

IXTH6N90

Manufacturer:

IXYS Corporation

File Size:

104.91 KB

Description:

Standard power mosfet.
Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.

📁 Related Datasheet

IXTH6N90 N-Channel MOSFET (INCHANGE)

IXTH6N90A Standard Power MOSFET (IXYS Corporation)

IXTH6N90A N-Channel MOSFET (INCHANGE)

IXTH6N100D2 N-Channel MOSFET (IXYS)

IXTH6N120 High Voltage Power MOSFET (IXYS Corporation)

IXTH6N150 Power MOSFET (IXYS)

IXTH6N50D2 N-Channel MOSFET (IXYS Corporation)

IXTH6N80 Power MOSFET (IXYS)

IXTH6N80 N-Channel MOSFET (INCHANGE)

IXTH6N80A Power MOSFET (IXYS)

TAGS

IXTH6N90 Standard Power MOSFET IXYS Corporation

Image Gallery

IXTH6N90 Datasheet Preview Page 2 IXTH6N90 Datasheet Preview Page 3

IXTH6N90 Distributor