IXTH62N65X2 - N-Channel MOSFET
IXTH62N65X2 Features
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤ 50mΩ@VGS= 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Easy to Mount
* Space Saving
