IXTH6N90 - N-Channel MOSFET

INCHANGE

IXTH6N90 Datasheet Preview — Preview of IXTH6N90 PDF

Datasheet Details

Part number	IXTH6N90
Manufacturer	INCHANGE
File Size	323.63 KB
Description	N-Channel MOSFET
Datasheet	IXTH6N90-INCHANGE.pdf

IXTH6N90 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 900 V ±20 V 6 A 24 A 180 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current ID= 6A@ TC=25℃.
Drain Source Voltage- : VDSS= 900V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 11, 2020 |