* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Suppl
IXTH6N80 Datasheet (101.66 KB)
IXTH6N80
IXYS
101.66 KB
Power mosfet.
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbo.
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