IXTH68N20 Power MOSFET

IXYS Corporation

Description

High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data.

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Datasheet Specifications

Part number: IXTH68N20
Manufacturer: IXYS Corporation
File Size: 279.05 KB
Datasheet: IXTH68N20_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Symbol Test Conditions Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA µA mA mΩ (TJ = 25°C unless otherwise specified) VDSS V

Applications

* Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% IXYS reserves the

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IXTH68N20 Power MOSFET IXYS Corporation

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