IXTH68N20 Datasheet - IXYS Corporation

IXTH68N20 Power MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 TO-247 Test conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 74N20 68N20 74N20 68N20 74N20 68N20 Maximum ratings 200 200 ±20 ±30 74 6.

IXTH68N20 Features

* Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Symbol Test Conditions Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA µA mA mΩ (TJ = 25°C unless otherwise specified) VDSS V

IXTH68N20_IXYSCorporation.pdf