Datasheet Details
Part number:
IXTH6N120, IXTT6N120
Manufacturer:
IXYS Corporation
File Size:
655.75 KB
Description:
High voltage power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTH6N120, IXTT6N120.
Please refer to the document for exact specifications by model.
IXTH6N120, IXTT6N120, High Voltage Power MOSFET
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from
IXTH6N120 Features
* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µ
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