* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µ
IXTH6N120 Datasheet (655.75 KB)
IXTH6N120
IXYS Corporation
655.75 KB
High voltage power mosfet.
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6N120 IXTT 6N120
VDSS ID25
RDS(on)
= 1200 V = 6A =.
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