IXTH6N120, IXTT6N120 High Voltage Power MOSFET

IXYS Corporation

Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A =.

📥 Download Datasheet

IXTH6N120 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTH6N120, IXTT6N120. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTH6N120, IXTT6N120
Manufacturer: IXYS Corporation
File Size: 655.75 KB
Datasheet: IXTT6N120_IXYSCorporation.pdf
Description: High Voltage Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTH6N120, IXTT6N120.
Please refer to the document for exact specifications by model.

Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µ

IXTH6N120 Distributors

📁 Related Datasheet

IXTH6N100D2 IXTH6N150 IXTH6N80 IXTH6N80A IXTH60N15 IXTH60N20L2

📌 All Tags

IXTT6N120 High Voltage Power MOSFET IXYS Corporation

IXYS Corporation IXTH6N120-like datasheet