IXTH6N50D2 Datasheet, Mosfet, IXYS Corporation

IXTH6N50D2 Features

• Mosfet
• Normally ON Mode
•  International Standard Packages
• Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
• Easy to Mount
• S

PDF File Details

Part number:

IXTH6N50D2

Manufacturer:

IXYS Corporation

File Size:

179.76kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTH6N50D2 Application

• Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regula

TAGS

IXTH6N50D2

IXYS Corporation

📁 Related Datasheet

IXTH6N100D2 - N-Channel MOSFET (IXYS)
Depletion Mode MOSFET N-Channel IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 TO-263 AA (IXTA) G S G S D (Tab) T.

IXTH6N120 - High Voltage Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A =.

IXTH6N150 - Power MOSFET (IXYS)
High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM I.

IXTH6N80 - Power MOSFET (IXYS)
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo.

IXTH6N80 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Fast Swi.

IXTH6N80A - Power MOSFET (IXYS)
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo.

IXTH6N80A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi.

IXTH6N90 - Standard Power MOSFET (IXYS Corporation)
Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.

IXTH6N90 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : .

IXTH6N90A - Standard Power MOSFET (IXYS Corporation)
Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.