IXTH60N20L2 Datasheet - IXYS

IXTH60N20L2 Power MOSFET

Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 VDSS = 200V ID25 = 60A ≤ RDS(on) 45mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting.

IXTH60N20L2 Features

* z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Guaranteed FBSOA at 75°C Advantages z Easy to Mount z Space Savings z High Power Density Applications z Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulato

IXTH60N20L2 Datasheet (151.11 KB)