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IXTH64N65X - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTH64N65X
Manufacturer	IXYS
File Size	155.96 KB
Description	Power MOSFET
Datasheet	IXTH64N65X-IXYS.pdf

IXTH64N65X Product details

Features

International Standard Package.
Low RDS(ON) and QG.
Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 10 A 100 A 51 m Advantages.
High Power Density.
Easy to Mount.

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Published: Aug 16, 2016 |