IXTH64N65X Datasheet - IXYS

IXTH64N65X Power MOSFET

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTH64N65X VDSS = ID25 = RDS(on) 650V 64A 51m Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 64 A 128 A 890 .

IXTH64N65X Features

* International Standard Package

* Low RDS(ON) and QG

* Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V

IXTH64N65X-IXYS.pdf