IXTP180N10T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IXTP180N10T *.

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Datasheet Specifications

Part number: IXTP180N10T
Manufacturer: INCHANGE
File Size: 247.29 KB
Datasheet: IXTP180N10T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 450 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~175 Tstg Storage T

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IXTP180N10T N-Channel MOSFET INCHANGE

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