IXTQ32N65X Datasheet, Mosfet, INCHANGE

✔ IXTQ32N65X Features

Drain Source Voltage- : VDSS= 650V(Min)
Static Drain-Source On-Resistance : RDS(on) ≤135mΩ@VGS= 10V
Fast Switching
100% avalanche tested
Minimum Lot-to-Lot variation

✔ IXTQ32N65X Application

Easy to Mount
Space Savings
High Power Density
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

PDF File Details

INCHANGE manufacturer logo

Part number:

IXTQ32N65X

Manufacturer:

INCHANGE

File Size:

252.57kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

📥 Download PDF (252.57kb)

📁 Related Datasheet

IXTQ32N65X - Power MOSFET (IXYS)
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A.

IXTQ32P20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-.

IXTQ30N50L - Power MOSFET (IXYS)
Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS V.

IXTQ30N50L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50L2 - Power MOSFET (IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 N-Channel Enhancement Mode D O DD R Gi G O ww O S Symbol VDSS VDGR V.

IXTQ30N50L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o.

IXTQ30N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N60L2 - Power MOSFET (IXYS)
Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IX.

IXTQ30N60L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw.

Stock and price

IXYS Corporation

MOSFET N-CH 650V 32A TO3P

DigiKey

IXTQ32N65X

0 In Stock

Qty : 30 units

Unit Price : $5.83

🛒 Buy Now

TAGS

IXTQ32N65X N-Channel MOSFET INCHANGE