* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5
* ID25, Note 1 Characteristic Values Min. Typ. Max. 600 2.5 4.5 ±100 50 300 V
IXTQ30N60L2 Datasheet (160.28 KB)
IXTQ30N60L2
IXYS
160.28 KB
Power mosfet.
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IX.
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