IXTQ30N60L2 Datasheet, Mosfet, IXYS

IXTQ30N60L2 Features

• Mosfet z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ

PDF File Details

Part number:

IXTQ30N60L2

Manufacturer:

IXYS

File Size:

160.28kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTQ30N60L2 Application

• Applications z z z z z 240 mΩ Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators © 2009 IXY

TAGS

IXTQ30N60L2

IXYS

📁 Related Datasheet

IXTQ30N60L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw.

IXTQ30N60P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 3.

IXTQ30N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTQ30N60P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive .

IXTQ30N50L - Power MOSFET (IXYS)
Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS V.

IXTQ30N50L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50L2 - Power MOSFET (IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 N-Channel Enhancement Mode D O DD R Gi G O ww O S Symbol VDSS VDGR V.

IXTQ30N50L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o.

IXTQ30N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ32N65X - Power MOSFET (IXYS)
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A.