IXTQ32N65X, IXTP32N65X Datasheet - IXYS

IXTQ32N65X - Power MOSFET

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for.

IXTQ32N65X Features

* Low RDS(ON) and QG

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

* AC and DC Motor Drives

IXTP32N65X-IXYS.pdf