IXTQ32N65X - Power MOSFET
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS ID25, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for.
IXTQ32N65X Features
* Low RDS(ON) and QG
* Low Package Inductance
* Fast Intrinsic Rectifier
Advantages
* High Power Density
* Easy to Mount
* Space Savings
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* PFC Circuits
* AC and DC Motor Drives