IXTQ30N60P Datasheet, MOSFET, INCHANGE

IXTQ30N60P Features

• Mosfet
• With TO-3PN packaging
• With low gate drive requirements
• Easy to drive
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device p

PDF File Details

Part number:

IXTQ30N60P

Manufacturer:

INCHANGE

File Size:

205.87kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTQ30N60P Application

• Applications
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600

TAGS

IXTQ30N60P

INCHANGE

📁 Related Datasheet

IXTQ30N60L2 - Power MOSFET (IXYS)
Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IX.

IXTQ30N60L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw.

IXTQ30N60P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 3.

IXTQ30N50L - Power MOSFET (IXYS)
Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS V.

IXTQ30N50L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50L2 - Power MOSFET (IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 N-Channel Enhancement Mode D O DD R Gi G O ww O S Symbol VDSS VDGR V.

IXTQ30N50L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ30N50P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o.

IXTQ30N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTQ32N65X - Power MOSFET (IXYS)
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A.