IXTQ36N30P, IXTA36N30P Datasheet - IXYS Corporation

IXTQ36N30P Power MOSFET

PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 300 V 36 A 110 mΩ Symbol Test Conditions TO-263 (IXTA) Maximum Ratings VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L TSOLD Md Weight TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VD.

IXTQ36N30P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99155E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg

IXTA36N30P_IXYSCorporation.pdf