* z Designed for linear operation z International standard packages z Unclamped Inductive Switching (UIS) rated. z Molding epoxies meet UL 94 V-0 flammability classification z Integrated gate resistor for easy paralleling z Guaranteed FBSOA at 75°C Applications z Solid state circuit breakers z Soft st
IXTQ30N50L Datasheet (144.95 KB)
IXTQ30N50L
IXYS
144.95 KB
Power mosfet.
Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS V.
📁 Related Datasheet
IXTQ30N50L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTQ30N50L2 - Power MOSFET
(IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2
N-Channel Enhancement Mode
D O DD
R Gi
G O ww
O
S
Symbol
VDSS VDGR
V.
IXTQ30N50L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTQ30N50P - PolarHV Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS
V= DSS
ID25 = ≤ RDS(o.
IXTQ30N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTQ30N60L2 - Power MOSFET
(IXYS)
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IX.
IXTQ30N60L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 240mΩ(Max) ·Fast Sw.
IXTQ30N60P - PolarHV Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS
VDSS = 600 V ID25 = 3.
