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IXTU1R4N60P

N-Channel MOSFET

IXTU1R4N60P Features

* Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converter

* Ideal for high-frequenc

IXTU1R4N60P Datasheet (270.12 KB)

Preview of IXTU1R4N60P PDF

Datasheet Details

Part number:

IXTU1R4N60P

Manufacturer:

INCHANGE

File Size:

270.12 KB

Description:

N-channel mosfet.

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IXTU1R4N60P N-Channel MOSFET INCHANGE

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