IXTU2N80P
INCHANGE
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N-channel mosfet.
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IXTU2N80P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTU2N80P IXTY2N80P IXTA2N80P
VDSS =
ID25 = RDS(on)
800V 2A 6
N-Channel Enhancement Mode
IXTP2N80P
TO-251 (IXTU)
Avalan.
IXTU01N100 - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDG.
IXTU01N100D - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Co.
IXTU01N80 - Power MOSFET
(IXYS Corporation)
..
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N80 IXTY 01N80
VDSS ID25
RDS(on)
= 800 V = 100mA = 50 Ω
Preliminary da.
IXTU02N50D - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
N-Channel
IXTY02N50D IXTU02N50D IXTP02N50D
D
VDSX =
ID25
=
RDS(on)
500V 200mA
30
TO-252 (IXTY)
G S
Symbol
VDSX V.
IXTU05N100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTU05N100
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTU05N100 - Power MOSFET
(IXYS)
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU05N100 IXTY05N100
VDSS =
ID25 = RDS(on)
1000V 750mA 17
TO-251 (IXTU)
.
IXTU12N06T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.
IXTU12N06T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU12N06T IXTY12N06T
VDSS = ID25 =
RDS(on) ≤
.
IXTU1N80P - Power MOSFET
(IXYS)
Preliminary Technical Information
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P
VDSS = ID.
