Datasheet Details
- Part number
- IXTU1R4N60P
- Manufacturer
- IXYS
- File Size
- 309.77 KB
- Datasheet
- IXTU1R4N60P_IXYS.pdf
- Description
- Power MOSFET
IXTU1R4N60P Description
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
IXTU1R4N60P Features
* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier
Advantages
* High Power Density
* Easy to Mount
IXTU1R4N60P Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode
Power Supplies
* AC and DC Motor Drives
*
Discharge
Circiuts
in
Lasers,
Spark
Igniters, RF Generators
* High Voltage Pulse Power
Applications
DS99253F(6/17)
IXTU1R4N60P
Symbol
Test Conditions
(TJ = 25C, Unle
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