IXTU02N50D Description
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 = RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.
IXTU02N50D Features
* Normally ON Mode
* International Standard Packages
* Low RDS(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell Structure
* Fast Switching Speed
Advantages
* Easy to Mount
* Space Savings
IXTU02N50D Applications
* Level Shifting
* Triggers
* Solid State Relays
* Current Regulators
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DS98861C(5/17)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 50V, ID = 200mA, Note 1
Ciss Coss Crss
VGS = -10V, VDS =
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