IXTU1N80P Datasheet - IXYS

IXTU1N80P Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 14Ω TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight G S (TAB) GD S (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD .

IXTU1N80P Features

* z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics

IXTU1N80P Datasheet (156.31 KB)