* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Internat
IXTU01N80 Datasheet (95.99 KB)
IXTU01N80
IXYS Corporation
95.99 KB
Power mosfet.
www.DataSheet4U.com
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N80 IXTY 01N80
VDSS ID25
RDS(on)
= 800 V = 100mA = 50 Ω
Preliminary da.
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