IXTU01N80 Description
www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da.
IXTU01N80 Features
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω
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VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
Internat
IXTU01N80 Applications
* l l l l
Level shifting Triggers Solid state relays Current regulators
V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
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98841 (5/01)
IXTU 01N80 IXTY 01N80
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. ty
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