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IXTU01N100, IXTY01N100 - Power MOSFET

IXTU01N100 Description

High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.

IXTU01N100 Features

* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure Advantages
* High Power Density

IXTU01N100 Applications

* Level Shifting
* Triggers
* Solid State Relays
* Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98812E(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(

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This datasheet PDF includes multiple part numbers: IXTU01N100, IXTY01N100. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTU01N100, IXTY01N100
Manufacturer
IXYS Corporation
File Size
152.03 KB
Datasheet
IXTY01N100_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTU01N100, IXTY01N100.
Please refer to the document for exact specifications by model.

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