IXTU01N100D, IXTY01N100D Datasheet - IXYS Corporation

IXTU01N100D - N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 1000 V 1000 V 20 V 30 V 400 mA 25 W 1.1 W - 55 +150 C 150 C - 5

IXTU01N100D Features

* Normally ON Mode

*  International Standard Packages

*  Low RDS(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell Structure

* Fast Switching Speed Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

IXTY01N100D_IXYSCorporation.pdf