IXTY4N65X2 - N-Channel MOSFET
IXTY4N65X2 Features
* Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% Avalanche Tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* Switched mode power supplies
* DC-DC con
