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MJ1000 NPN Transistor

MJ1000 Description

isc Silicon NPN Darlington Power Transistor MJ1000 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Volt.

MJ1000 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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Datasheet Details

Part number
MJ1000
Manufacturer
INCHANGE
File Size
202.88 KB
Datasheet
MJ1000-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJ1000-like datasheet