MJ1000 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor MJ1000 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: MJ1000
Manufacturer: INCHANGE
File Size: 202.88 KB
Datasheet: MJ1000-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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MJ1000 NPN Transistor INCHANGE

INCHANGE MJ1000-like datasheet