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MJ1000 Datasheet - INCHANGE

MJ1000 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 3A *Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Design.

MJ1000-INCHANGE.pdf

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Datasheet Details

Part number:

MJ1000

Manufacturer:

INCHANGE

File Size:

202.88 KB

Description:

Npn transistor.

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MJ1000 MJ1000 NPN Transistor INCHANGE