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MJ1000 - NPN Transistor

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Datasheet Details

Part number MJ1000
Manufacturer INCHANGE
File Size 202.88 KB
Description NPN Transistor
Datasheet download datasheet MJ1000-INCHANGE.pdf

MJ1000 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Col

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