MJ1000 Datasheet - INCHANGE

MJ1000, NPN Transistor

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *High DC Current

Applications

* Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

MJ1000-INCHANGE.pdf