Datasheet4U Logo Datasheet4U.com

MJ1000

NPN Transistor

MJ1000 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
*High DC Current Gain- : hFE= 1000(Min.)@IC= 3A
*Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Design.

MJ1000 Datasheet (202.88 KB)

Preview of MJ1000 PDF

Datasheet Details

Part number:

MJ1000

Manufacturer:

INCHANGE

File Size:

202.88 KB

Description:

Npn transistor.

📁 Related Datasheet

MJ1000 Medium-Power Complementary Silicon Transistors (Motorola Inc)

MJ1000 (MJ1000 / MJ1001) SILICON POWER TRANSISTOR (SavantIC)

MJ1000 (MJ1000 / MJ1001) Complementary Power Darlingtons (Comset Semiconductors)

MJ10000 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)

MJ10000 NPN Silicon Transistor (Wing Shing Computer Components)

MJ10001 NPN Silicon Transistor (Wing Shing Computer Components)

MJ10001 Silicon NPN Transistor (NTE)

MJ10002 NPN Transistor (INCHANGE)

MJ10003 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)

MJ10004 Darlington Power Transistor (Multicomp)

TAGS

MJ1000 NPN Transistor INCHANGE

Image Gallery

MJ1000 Datasheet Preview Page 2

MJ1000 Distributor