MJ1000 Datasheet, Transistor, INCHANGE

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MJ1000

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INCHANGE

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202.88kb

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📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)

High DC Current Gain- : hFE= 1000(Min.)@IC= 3A

MJ1000 Application

• Applications
• Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

TAGS

MJ1000

INCHANGE

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