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MJ11012 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to the PNP MJ11011 Minimum Lot-to-Lot variations for robust device performance and reliable

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Datasheet Details

Part number MJ11012
Manufacturer INCHANGE
File Size 203.58 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
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