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STP7NM60N N-Channel MOSFET

STP7NM60N Description

isc N-Channel MOSFET Transistor STP7NM60N .

STP7NM60N Features

* Drain Current
* ID= 5A@ TC=25ā„ƒ
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 900mĪ©(Max)
* 100% avalanche tested

STP7NM60N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25ā„ƒ) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25ā„ƒ TJ Max. Operating Junction Temperature Tstg Storage Tempe

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Datasheet Details

Part number
STP7NM60N
Manufacturer
INCHANGE
File Size
271.64 KB
Datasheet
STP7NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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