STP8NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor STP8NM60ND .

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Datasheet Specifications

Part number: STP8NM60ND
Manufacturer: INCHANGE
File Size: 271.57 KB
Datasheet: STP8NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Ope

STP8NM60ND Distributors

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STP8NM60N STP8NM60 STP8NM60D STP8NM60FP STP8NM50 STP8NM50FP

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STP8NM60ND N-Channel MOSFET INCHANGE

INCHANGE STP8NM60ND-like datasheet