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STP8N65M5 N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP8N65M5 *.

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Datasheet Specifications

Part number
STP8N65M5
Manufacturer
INCHANGE
File Size
186.16 KB
Datasheet
STP8N65M5-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Higher VDSS rating
* Excellent switching performance
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 7.0 4.4 28 PD Total Dissipation 70 Tj Max. Operating Junction

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