STW18NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS.

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Datasheet Specifications

Part number: STW18NM60ND
Manufacturer: INCHANGE
File Size: 349.31 KB
Datasheet: STW18NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 130 W TJ Max.

STW18NM60ND Distributors

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STW18NM60ND N-Channel MOSFET INCHANGE

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