STW18NM60ND Datasheet - INCHANGE

Datasheet Details

Part number:

STW18NM60ND

Manufacturer:

INCHANGE

File Size:

349.31 KB

Description:

N-Channel MOSFET

isc N-Channel MOSFET Transistor FEATURES *Drain Current *ID= 13A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable op

STW18NM60ND-INCHANGE.pdf

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STW18NM60ND, N-Channel MOSFET

*Low Drain-Source On-Resistance APPLICATIONS *Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A

STW18NM60ND Distributor

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STW18NM60ND N-Channel MOSFET INCHANGE

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