STW18NK60Z

N-CHANNEL MOSFET

ST Microelectronics

STW18NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STW18NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STW18NK60Z Datasheet (206.19 KB)

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STW18NK60Z

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STMicroelectronics ↗

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N-channel mosfet.
STW18NK60Z N-CHANNEL 600V - 0.27Ω - 16A TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STW18NK60Z s s s s s s VDSS 600 V RDS(on) < 0.36 Ω ID 16 A P.

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STW18NK60Z N-CHANNEL MOSFET ST Microelectronics

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STW18NK60Z Features

STW18NK60Z General Description

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