STW18N60DM2

N-channel Power MOSFET

STMicroelectronics

STW18N60DM2 Features

* Order code STW18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 12 A

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

* Switching applicat

STW18N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STW18N60DM2 Datasheet (433.32 KB)

STW18N60DM2 Datasheet Preview — Preview of STW18N60DM2 PDF

Datasheet Details

Part number:

STW18N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

433.32 KB

Description:

N-channel power mosfet.
STW18N60DM2 N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Inter.

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STW18N60DM2 Features

STW18N60DM2 General Description

Datasheet Details

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Description:

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