Datasheet4U Logo Datasheet4U.com

TK10J80E N-Channel MOSFET

TK10J80E Description

isc N-Channel MOSFET Transistor *.

TK10J80E Features

* Low drain-source on-resistance: RDS(on) ≤1.0Ω.
* Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MAXI

TK10J80E Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of TK10J80E PDF
datasheet Preview Page 2

Datasheet Details

Part number
TK10J80E
Manufacturer
INCHANGE
File Size
264.79 KB
Datasheet
TK10J80E-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • TK100A06N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A08N1 - MOSFETs (Toshiba Semiconductor)
  • TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
  • TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK100F04K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F04K3L - MOSFETs (Toshiba Semiconductor)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE TK10J80E-like datasheet