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TK10P60W N-Channel MOSFET

TK10P60W Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10P60W *.

TK10P60W Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK10P60W Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 80 Tch Max. Operating Junction Te

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Datasheet Details

Part number
TK10P60W
Manufacturer
INCHANGE
File Size
204.67 KB
Datasheet
TK10P60W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE TK10P60W-like datasheet