TK12A60D Datasheet - INCHANGE

TK12A60D, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-220F packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 45 Tj Operating Junction T

TK12A60D-INCHANGE.pdf