IXFH14N60P Datasheet - IXYS Corporation

IXFH14N60P Polar MOSFET

Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA14N60P IXFP14N60P IXFH14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 14 42 14 900 10 300 -55 +150 150 -55 +150 A A A mJ .

IXFH14N60P Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFH14N60P Datasheet (338.56 KB)

IXFH14N60P Datasheet Preview — Preview of IXFH14N60P PDF

Datasheet Details

Part number:

IXFH14N60P

Manufacturer:

IXYS Corporation

File Size:

338.56 KB

Description:

Polar mosfet.

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IXFH14N60P Polar MOSFET IXYS Corporation

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