IXFH14N80 Datasheet, Mosfet, IXYS Corporation

IXFH14N80 Features

• Mosfet 300 -55 +150 150 -55 +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated <

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Part number:

IXFH14N80

Manufacturer:

IXYS Corporation

File Size:

100.00kb

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📄 Datasheet

Description:

Power mosfet.

IXFH14N80 Application

• Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coe

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IXFH14N80

IXYS Corporation

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