* 300 -55 +150 150 -55 +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier
IXFH14N80 Datasheet (100.00 KB)
IXFH14N80
IXYS Corporation
100.00 KB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH14N80 IXFH15N80
ID25
RDS(on) 0.70 W 0.60 W
800 V .
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