IXFH230N075T2 Datasheet - IXYS Corporation

IXFH230N075T2 TrenchT2 HiperFET Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ± 20 230 160 700 115 850 480 -55 +17.

IXFH230N075T2 Features

* z z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds 300 260 6 Easy to Mount Space Savings High Power Density A

IXFH230N075T2_IXYSCorporation.pdf