IXFH230N10T Datasheet - IXYS Corporation

IXFH230N10T Trench HiperFET Power MOSFET

Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VDSS ID25 RDS(on) = 100V = 230A ≤ 4.7mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 20 ± .

IXFH230N10T Features

* z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advant

IXFH230N10T Datasheet (181.15 KB)