IXFH230N10T Datasheet - IXYS Corporation

IXFH230N10T, Trench HiperFET Power MOSFET

Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VD.

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IXFH230N10T_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH230N10T

Manufacturer:

IXYS Corporation

File Size:

181.15 KB

Description:

Trench HiperFET Power MOSFET

Features

* z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advant

Applications

* z z z ±200 nA 50 μA 3 mA 4.7 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications www. DataSheet4U. net © 2009 IXYS CORPORATION, All rights reserved DS100104(0

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IXFH230N10T Trench HiperFET Power MOSFET IXYS Corporation

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