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IXFH230N10T Datasheet - IXYS Corporation

Trench HiperFET Power MOSFET

IXFH230N10T Features

* z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advant

IXFH230N10T Datasheet (181.15 KB)

Preview of IXFH230N10T PDF

Datasheet Details

Part number:

IXFH230N10T

Manufacturer:

IXYS Corporation

File Size:

181.15 KB

Description:

Trench hiperfet power mosfet.
Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VD.

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IXFH230N10T Trench HiperFET Power MOSFET IXYS Corporation

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