* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Symbol VDSS VGS(th
IXFH26N50 Datasheet (149.12 KB)
IXFH26N50
IXYS Corporation
149.12 KB
Power mosfet.
HiPerFETTM Power MOSFETs
IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family OBSOLETE:.
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