IXFH26N50 Datasheet - IXYS Corporation

IXFH26N50 - Power MOSFET

HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions Maximum Ratings VDSS ID25 RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω t rr ≤ 250 ns TO-247 AD (IXFH) VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 500 V 500 V ±20 V ±30

IXFH26N50 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Symbol VDSS VGS(th

IXFH26N50_IXYSCorporation.pdf