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IXFH26N60P Datasheet - IXYS Corporation

IXFH26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse .

IXFH26N60P Features

* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤

IXFH26N60P Datasheet (269.78 KB)

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Datasheet Details

Part number:

IXFH26N60P

Manufacturer:

IXYS Corporation

File Size:

269.78 KB

Description:

N-channel enhancement mode fast recovery diode avalanche rated.

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IXFH26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

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