Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse
IXFV26N60P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH26N60P, IXFV26N60P
Manufacturer:
IXYS Corporation
File Size:
269.78 KB
Description:
N-channel enhancement mode fast recovery diode avalanche rated.
Note:
This datasheet PDF includes multiple part numbers: IXFH26N60P, IXFV26N60P.
Please refer to the document for exact specifications by model.