IXFH26N60Q Datasheet - IXYS

IXFH26N60Q Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR V GS VGSM I D25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, V.

IXFH26N60Q Features

* l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier Advantages l Easy to mount l Space savings l High power dens

IXFH26N60Q-IXYS.pdf