* l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier Advantages l Easy to mount l Space savings l High power dens
IXFH26N60Q Datasheet (106.02 KB)
IXFH26N60Q
IXYS
106.02 KB
Power mosfets.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q IXFT 26N60Q
VDSS ID25 RDS(on)
= 600 V =.
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