IXFH26N55Q Datasheet - IXYS

IXFH26N55Q Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.23 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di.

IXFH26N55Q Features

* z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z

IXFH26N55Q-IXYS.pdf